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| Semiconductor STC403D NPN Silicon Transistor Features * Power Transistor General Purpose application * Low saturation voltage : VC E ( S A T )=0.4V Max. * High Voltage : VC E O =60V Min. Ordering Information Type NO. STC403D Marking STC403 Package Code D -PAK Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST--D003-000 1 STC403D Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation (Tc=25E) Junction temperature Storage temperature Symbol VC B O VC E O VE B O IC PC Tj T stg Ratings 80 60 5 3 15 150 -55~150 Unit V V V A W C C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance Turn-on Time Switching Time Storage Time Fall Time Symbol BVCEO ICBO IEBO h FE * VBE(ON) VCE(sat) fT C ob Ton Tstg Tf Test Condition IC =50mA, IB=0 VCB=60V, IE=0 VEB=5V, IC =0 VCE=5V, IC =0.5A VCE=5V, IC =0.5A IC =2A, IB=0.2A VCB=5V, IC =0.5A VCB=10V, IE=0, f=1MHz Min. 60 200 - Typ. 0.7 0.4 30 35 0.65 1.3 0.65 Max. 50 50 400 1 1 - Unit V A A V V MH pF A * HFE rank : 200~400 Only KST--D003-000 2 STC403D Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 VCE - IC Fig. 3 hFE-IC Fig. 5 IC - VCE Fig. 5 Safe operating Area * Continuous * * ) 1 KST--D003-000 3 |
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